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Numéro d'article:
85774757
Infineon N Channel Mosfet, 200V, 50A, To-247Ac - IRFP260NPBF
Numéro d'article:
85774757
DJF 5607
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Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.04ohm
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Note: Step Down Voltage Transformer required for using electronics products of États-Unis store (110-120). Recommended power converters Acheter maintenant.
Ce qui se démarque
High Voltage Rating
Capable of withstanding up to 200V, ensuring reliable performance in high-voltage applications, making it ideal for power management systems.
High Current Capacity
Handles continuous currents up to 50A, providing exceptional efficiency and reliability for demanding electronic circuits, especially in industrial environments.
Robust Package Design
Packaged in TO-247AC, it offers superior thermal performance and ease of mounting, enhancing heat dissipation for improved longevity and performance in high-power applications.
Détails du produit
- Price For: Pack of 1Order Unit: Each 1 Continuous Drain Current Id:: 50 Drain Source Voltage Vds:: 200 MSL:: - No. of Pins:: 3 On Resistance Rds(on):: 0.04 Operating Temperature Max:: 175 Operating Temperature Min:: -55 Power Dissipation Pd:: 300 Rds(on) Test Voltage Vgs:: 10 SVHC:: No SVHC (17-Dec-2014) Threshold Voltage Vgs Typ:: 4 Transistor Case Style:: TO-247AC
- Transistor Polarity:: N Channel
Product Technical Details
| Item Weight | 0.64 ounces |
| Manufacturer | Infineon |
| Item model number | IRFP260NPBF |
À qui est-ce destiné ?
-
Power Supply Designers
Ideal for creating efficient power supplies due to its high voltage and current ratings.
-
Motor Control Applications
Perfect for driving large motors in electric vehicles and industrial machines, ensuring stable operation.
-
Switching Regulators
Great choice for use in switching regulators demanding reliable switching performance and efficient energy conversion.
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Low Power Circuits
Not suitable for low power applications where lower rated components could provide sufficient performance.
-
High Frequency Applications
Limited effectiveness in high-frequency operations due to potentially slower switching speeds.
-
Consumer Electronics
Excessively robust for most consumer devices that require smaller, low-power MOSFET alternatives.
DESCRIPTION DU PRODUIT
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Questions et réponses des clients
-
question:
What are the key specifications of the Infineon N Channel Mosfet IRFP260NPBF?
répondre: The Infineon IRFP260NPBF N Channel Mosfet comes with a voltage rating of 200V and a continuous drain current of 50A. This device is designed for high efficiency and performance in various applications, featuring a low on-resistance specification which allows for reduced power losses. It is particularly suited for high-frequency switching applications and is often used in power supplies and DC-DC converters, offering robust performance and thermal management in demanding environments. -
question:
What applications is the IRFP260NPBF suitable for?
répondre: The IRFP260NPBF is ideal for several applications due to its high voltage and current capabilities. Common uses include power switching in industrial equipment, automotive applications, and renewable energy systems like inverters for solar panels. Its ability to handle high-frequency switching makes it a preferred choice for DC-DC converters and motor drives, enabling efficient operation in various electronic designs while supporting performance optimization and thermal management. -
question:
What advantages does the N Channel design provide?
répondre: N Channel MOSFETs like the IRFP260NPBF offer several advantages, including higher electron mobility compared to P Channel MOSFETs, which translates into faster switching speeds and greater efficiency. This characteristic is crucial in applications that demand rapid switching to minimize energy losses. Additionally, they typically have lower on-resistance, which allows for improved thermal performance and reduced heat generation during operation, making them an excellent choice for high-power applications. -
question:
How does the package type (TO-247AC) affect performance?
répondre: The TO-247AC package provides several benefits, such as excellent thermal performance because of its larger surface area, which facilitates better heat dissipation. This is particularly important in high-power applications like motor drives and power supplies. Additionally, this package allows for easier soldering and assembly in PCB designs, making the IRFP260NPBF not only a robust choice in performance but also practical in manufacturing processes. -
question:
What is the maximum gate-source voltage for the IRFP260NPBF?
répondre: The maximum gate-source voltage (Vgs) for the IRFP260NPBF is ±20V. This specification is crucial to ensure the reliability of the MOSFET during operation as exceeding this voltage can lead to device failure. Proper gate drive design is essential to keep the Vgs within this limit, which is particularly important in applications involving PWM (Pulse Width Modulation) control for motor or power supply systems. -
question:
Can the IRFP260NPBF be used for automotive applications?
répondre: Yes, the IRFP260NPBF is well-suited for automotive applications due to its high voltage and current ratings. It can efficiently handle the demands of automotive power systems and contribute to improved performance and durability in components such as electronic control units and motor drives. Its robust thermal management capabilities also make it a great fit for automotive environments where reliability is paramount. -
question:
What are the thermal resistance ratings for the IRFP260NPBF?
répondre: The thermal resistance ratings for the IRFP260NPBF, typically specified as RθJC and RθJA, indicate its ability to dissipate heat effectively. Lower thermal resistance values contribute to better heat management in applications, thereby extending the operational life of the MOSFET. Utilizing proper heat sinks or cooling strategies can further enhance its performance in high-frequency or high-power applications, ensuring stability during operation. -
question:
What is the typical drain-source breakdown voltage of the IRFP260NPBF?
répondre: The typical drain-source breakdown voltage (V(BR)DSS) for the IRFP260NPBF is rated at 200V, allowing it to efficiently handle a wide range of voltage applications. This specification is vital for ensuring the MOSFET does not undergo breakdown under high-voltage conditions, making it reliable in power converters and other applications where voltage spikes can occur. It's essential to consider this rating in circuit designs to maintain system integrity. -
question:
What gate drive requirements are needed for the IRFP260NPBF?
répondre: The IRFP260NPBF requires an appropriate gate drive voltage, typically around 10V to 15V for optimal performance. Ensuring the gate voltage is within this range minimizes switching losses and enables the device to operate efficiently. It's important to use a proper gate driver circuit to maintain fast switching times and reduce the likelihood of overheating during operation, which is crucial in high-frequency applications such as switching power supplies. -
question:
Where can I buy the Infineon N Channel Mosfet IRFP260NPBF?
répondre: You can purchase the Infineon N Channel Mosfet, 200V, 50A, TO-247AC - IRFP260NPBF conveniently through Ubuy in Djibouti. Ubuy provides a reliable platform for sourcing electronic components and offers a variety of shipping options tailored to your location, making it a great choice for obtaining this product for your projects.
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Caractéristiques et avantages
- N Channel MOSFET with high current and voltage capabilities
- Low on-resistance for efficient power management
- TO-247AC case style for reliable mounting
- RoHS compliant for environmental safety
- Operating temperature range from -55 to 175 degrees
- SVHC free and 3 pins for easy installation
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